Proceedings Paper
Field-assisted photoemission from semiconductor heterostructures up to 1.7 um| Format | Member Price | Non-Member Price |
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Paper Abstract
We present the spectral curves of the photoemission from biased semiconductor heterostructures with Schottky barrier InGaAs-InP-Ag in the region of spectrum up to 1.7 micrometers and consider the main processes that determine the efficiency of photoemission from such structures. We also present the characteristics of dark-current emission from InGaAs-InP- Ag heterostructures and show that it is connected with thermal generation of electrons in the space charge region of InGaAs near the interface.
Paper Details
Date Published: 1 April 1993
PDF: 5 pages
Proc. SPIE 1982, Photoelectronic Detection and Imaging: Technology and Applications '93, (1 April 1993); doi: 10.1117/12.142003
Published in SPIE Proceedings Vol. 1982:
Photoelectronic Detection and Imaging: Technology and Applications '93
LiWei Zhou, Editor(s)
PDF: 5 pages
Proc. SPIE 1982, Photoelectronic Detection and Imaging: Technology and Applications '93, (1 April 1993); doi: 10.1117/12.142003
Show Author Affiliations
A. L. Musatov, Institute of Radio Engineering and Electronics (Russia)
S. L. Filippov, Institute of Radio Engineering and Electronics (Russia)
S. L. Filippov, Institute of Radio Engineering and Electronics (Russia)
K. R. Izraelyants, Institute of Radio Engineering and Electronics (Russia)
V. Korotkikh, Institute of Radio Engineering and Electronics (Russia)
V. Korotkikh, Institute of Radio Engineering and Electronics (Russia)
Published in SPIE Proceedings Vol. 1982:
Photoelectronic Detection and Imaging: Technology and Applications '93
LiWei Zhou, Editor(s)
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