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Proceedings Paper

Challenge of Si/SiGe technology to optoelectronics
Author(s): C.Y. Chang; J. G. Jung
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Paper Abstract

Low temperature epitaxy (LTE) of Si and SiGecanbe performed at a temperature of 550 C or lower. Very promising applications can be opened. Such as high speed/high frequency operations at 90GHZ by constructing heterojunction bipolar transistors. High performance FET'slikepseudomorphic p-channel orn-channel high mobility field effect transistors are presented which canbe composed to perform CMOS operations.

Optoelectronic devices such as IRdetectors (1-12um), mutiple quantum well (MOW), disordered superlattice (d-SL) which are the potential candidatesof IR detector and optical sources (e.q. LED, LD etc.)

Various physical insights regarding to SiGe heterostructures are presented which includeswave function filter, mass filter as well as band mixing are introduced.

Researchesat National Nano Device Laboratory (NDL) which processes the capability of 0.3um Si ULSI technologies and SiGe works as well as lll-V, a-Si/SiGe lines are also presented.

Paper Details

Date Published: 28 January 1993
PDF: 26 pages
Proc. SPIE 10267, Integrated Optics and Optoelectronics: A Critical Review, 102670K (28 January 1993); doi: 10.1117/12.141408
Show Author Affiliations
C.Y. Chang, National Chiao Tung Univ. (Taiwan)
J. G. Jung, National Chiao Tung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 10267:
Integrated Optics and Optoelectronics: A Critical Review
Ka Kha Wong; Manijeh Razeghi, Editor(s)

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