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Proceedings Paper

Temperature-engineered growth of low-threshold lasers on nonplanar substrates
Author(s): Newton C. Frateschi; Paul Daniel Dapkus
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Paper Abstract

The temperature engineered growth (TEG) technique for the single step fabrication of buried heterostructure lasers is reviewed. GaAs/AlGaAs quantum well lasers and strained InGaAs/GaAs quantum well lasers have been fabricated with threshold current of 2 mA and 3 mA for the GaAs and InGaAs systems, respectively. We show that the use of strained quantum wells resulted in better collection of carriers and higher external quantum efficiency (88%). The growth of strained InGaAs/GaAs lasers integrated with Bragg reflectors utilizing the TEG technique is shown to be a promising technique for obtaining low threshold current surface emitting lasers incorporating a folded cavity.

Paper Details

Date Published: 16 February 1993
PDF: 9 pages
Proc. SPIE 1788, Sources and Detectors for Fiber Communications, (16 February 1993); doi: 10.1117/12.141114
Show Author Affiliations
Newton C. Frateschi, Univ. of Southern California (United States)
Paul Daniel Dapkus, Univ. of Southern California (United States)

Published in SPIE Proceedings Vol. 1788:
Sources and Detectors for Fiber Communications
Stephen D. Hersee, Editor(s)

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