Share Email Print

Proceedings Paper

Dual pin photodetector with very low parasitic series interconnection
Author(s): Oscar Anton-Molina; J. F. Hernandez-Gil; Jose Luis de Miguel y Anton; Martin G. Young; Uziel Koren; Barry I. Miller; Javier Alonso; Enrique Garcia
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

A dual back-illuminated photodetector for balanced coherent receivers applications is presented. The photodetectors have an InP/InGaAs/InP p-i-n structure. Several additional semiconductor layers have been added to fabricate the structure by selective wet etching. The material was grown by metalorganic vapor phase epitaxy (MOVPE) on a semiinsulating, Fe doped, InP substrate. The passivation and the insulation between contacts were obtained using polyimide. The contact structure is intended to connect the photodetector to the package by flip-chip. The measured photodetector capacitance was around 0.2 pF for a single photodetector (without series connection), the series resistance under 20 ohms, and the dark current under 10 nA.

Paper Details

Date Published: 16 February 1993
PDF: 7 pages
Proc. SPIE 1788, Sources and Detectors for Fiber Communications, (16 February 1993); doi: 10.1117/12.141104
Show Author Affiliations
Oscar Anton-Molina, Telefonica, Investigacion y Desarrollo (Spain)
J. F. Hernandez-Gil, Telefonica, Investigacion y Desarrollo (Spain)
Jose Luis de Miguel y Anton, Telefonica, Investigacion y Desarrollo (Spain)
Martin G. Young, AT&T Bell Labs. (United States)
Uziel Koren, AT&T Bell Labs. (United States)
Barry I. Miller, AT&T Bell Labs. (United States)
Javier Alonso, Telefonica, Investigacion y Desarrollo (Spain)
Enrique Garcia, Telefonica, Investigacion y Desarrollo (Spain)

Published in SPIE Proceedings Vol. 1788:
Sources and Detectors for Fiber Communications
Stephen D. Hersee, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?