Kinetics and magnitude of integral flow of thermal radiation excited by laser beam in semiconductors and metal-semiconductor structures are measured. It is shown that such measurements allow one to control surface properties of a semiconductor, to determine a velocity of surface carriers recombination, to reveal near-surface macrodefects, to define the quality of metal-semiconductor interface, etc., and, in addition, to draw conclusions about the conditions and mechanisms for laser-stimulated processes of diffusion, defects creation, p-n junction formation, and other processes of laser modification of semiconductor structures.

Date Published: 9 February 1993
PDF: 6 pages
Proc. SPIE 1712, 14th Symposium on Photonic Measurement, (9 February 1993); doi: 10.1117/12.140173

Published in SPIE Proceedings Vol. 1712:
14th Symposium on Photonic Measurement
Janos Schanda; Tivadar Lippenyi, Editor(s)