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Proceedings Paper

High-resolution spatial uniformity of surface reflectance and response of silicon photodiodes
Author(s): Antoine Bittar; M. G. White
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Paper Abstract

The spatial variations of surface reflectance and response of a number of silicon photodiodes has been measured at wavelengths between 325 nm and 633 nm using a measurement spot size (1/e2) of approximately 50 micrometers . The surface reflectances have been modelled using ellipsometrically determined SiO2 layer thicknesses and compared with spectrophotometric measurements. Also the reflectance variations across the diode surface have been correlated with the response variations to give a measured of the spatial internal quantum efficiency uniformity for each photodiode.

Paper Details

Date Published: 9 February 1993
PDF: 11 pages
Proc. SPIE 1712, 14th Symposium on Photonic Measurement, (9 February 1993); doi: 10.1117/12.140163
Show Author Affiliations
Antoine Bittar, DSIR Physical Sciences (New Zealand)
M. G. White, DSIR Physical Sciences (New Zealand)

Published in SPIE Proceedings Vol. 1712:
14th Symposium on Photonic Measurement
Janos Schanda; Tivadar Lippenyi, Editor(s)

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