Share Email Print

Proceedings Paper

Current gain degradation of boron-doped polysilicon emitter transistors under forward current stress in a C-BiCMOS technology
Author(s): Ji Zhao; Guann-pyng Li; K. Y. Liao; Maw-Rong Chin; J. Y.-C. Sun
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The conventional hydrogen-contained plasma etching for emitter via hole opening can introduce atomic hydrogen into poly emitter. After short time forward current stress, p-n-p transistors fabricated by this process show increase of both current gain ((beta) ) and base current 1/f noise in the median bias region. The subsequent low temperature annealing characteristics of p-n-p indicate that hydrogen boron pairs are dissociated. The (beta) increase during current stress can be explained by the reduction of effective surface recombination velocity of emitter due to hydrogen boron pair formation.

Paper Details

Date Published: 14 January 1993
PDF: 8 pages
Proc. SPIE 1802, Microelectronics Manufacturing and Reliability, (14 January 1993);
Show Author Affiliations
Ji Zhao, Univ. of California/Irvine (United States)
Guann-pyng Li, Univ. of California/Irvine (United States)
K. Y. Liao, Hughes Aircraft Co. (United States)
Maw-Rong Chin, Hughes Aircraft Co. (United States)
J. Y.-C. Sun, IBM Thomas J. Watson Research Ctr. (United States)

Published in SPIE Proceedings Vol. 1802:
Microelectronics Manufacturing and Reliability
Barbara Vasquez; Anant G. Sabnis; Kenneth P. MacWilliams; Jason C.S. Woo, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?