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Proceedings Paper

Optical and infrared spectra of thermally annealed Pb-implanted SiO2 glasses
Author(s): Don Otto Henderson; Steven H. Morgan; Richard Mu; Robert H. Magruder III; T. S. Anderson; J. E. Wittig; Ray A. Zuhr
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Paper Abstract

Infrared reflectance between 4000 and 100 cm-1 and optical spectra between 1.8 and 6.2 eV of high purity silica implanted with nominal doses of 1, 3, and 6 X 1016 Pb ions/cm2 were recorded before and after annealing at 400, 600, and 800 degree(s) C for 1 hour. Curve resolution analysis of the Si-O stretching region resulted in six peaks which were characterized by their lineshape parameters. The oscillator strength of the ion induced defect peak at 1035 cm-1 was found to depend on ion dose. The defect band at 1035 cm-1 decreased to an intensity comparable to that of the unimplanted glass after thermal annealing for 1 hour at 800 degree(s) C. Far infrared spectra indicated the formation of lead silicate particles after annealing.

Paper Details

Date Published: 11 January 1993
PDF: 9 pages
Proc. SPIE 1761, Damage to Space Optics, and Properties and Characteristics of Optical Glass, (11 January 1993); doi: 10.1117/12.138927
Show Author Affiliations
Don Otto Henderson, Fisk Univ. (United States)
Steven H. Morgan, Fisk Univ. (United States)
Richard Mu, Fisk Univ. (United States)
Robert H. Magruder III, Belmont Univ. (United States)
T. S. Anderson, Belmont Univ. (United States)
J. E. Wittig, Vanderbilt Univ. (United States)
Ray A. Zuhr, Oak Ridge National Lab. (United States)

Published in SPIE Proceedings Vol. 1761:
Damage to Space Optics, and Properties and Characteristics of Optical Glass
James B. Breckinridge; Alexander J. Marker III, Editor(s)

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