Share Email Print

Proceedings Paper

Optically controlled MIS-like InP-based FETs for photodetection and switching
Author(s): B. L. Sharma; M. B. Dutt
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Field-effect transistors based on InP have many advantages over those based on GaAs. The major difficulty in realizing MESFETs based on InP, however, lies in low barrier height and breakdown voltage of Schottky gate. To overcome this, a pseudomorphic insulating layer instead of a conventional insulator on gate for a MIS-like FET structure is proposed in this paper. The computed I-V characteristics for such a structure having semitransparent gate metallization under dark and optically illuminated gate conditions are presented.

Paper Details

Date Published: 10 December 1992
PDF: 7 pages
Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); doi: 10.1117/12.138631
Show Author Affiliations
B. L. Sharma, Solid State Physics Lab. (India)
M. B. Dutt, Solid State Physics Lab. (India)

Published in SPIE Proceedings Vol. 1735:
Infrared Detectors: State of the Art
Wagih H. Makky, Editor(s)

© SPIE. Terms of Use
Back to Top