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Proceedings Paper

Infrared detector circuits using monolithic CMOS Op-Amps with InSb detectors in a transimpedance configuration
Author(s): David S. Smith
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Paper Abstract

As the emphasis in infrared detector research shifts toward larger and more complicated arrays the amount of time spent on simple single-element and small arrays is decreasing. One set of applications where discrete detectors and arrays are still finding use is in satellites. In addition, scanned imaging arrays based on single element detectors and small arrays are still being manufactured. Discussion here is for small arrays and single element detectors. One of the aspects of detector operation that always needs to be addressed is amplification. Often detectors are attached to amplifiers through rather long leads. Such systems are subject to unwanted microphonic response as a result of the motion of the leads relative to each other or to the ground plane. This sort of microphonic response can many times be eliminated through careful wiring and routing techniques, however, in some severe environments it is not possible to eliminate all microphonic response. A commonly used solution to this problem is to hybridize the detector with a JFET front end to reduce the effective output resistance of the detector circuit relative to the amplifier input. The TIA in such configurations is completed off the focal plane at room temperature. This means that half the circuit is operating at cryogenic temperatures while the other part is operating at room temperature some distance away. Ideally it would be more convenient, if not better, to include the amplifier on the focal plane with the detector. (Of course this hybridization is necessary for large two-dimensional arrays.) Data have been acquired to show some of the limitations and opportunities for such an approach. Typical bipolar operational amplifiers (OP-27, OP-37, LM108) will not operate well at cryogenic temperatures. CMOS operational amplifiers generally will operate at cryogenic temperatures but suffer from high front-end voltage noise. The TLC2201 from Texas Instruments is a CMOS op-amp manufactured for low voltage noise. A discussion of its applicability to IR detector operation is presented herein.

Paper Details

Date Published: 1 September 1992
PDF: 8 pages
Proc. SPIE 1685, Infrared Detectors and Focal Plane Arrays II, (1 September 1992); doi: 10.1117/12.137809
Show Author Affiliations
David S. Smith, Cincinnati Electronics Corp. (United States)

Published in SPIE Proceedings Vol. 1685:
Infrared Detectors and Focal Plane Arrays II
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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