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Proceedings Paper

HgCdTe photovoltaic detectors and some related aspects
Author(s): Fei Ming Tong; Henry X. Yuan; Xiuzhen Yang; Nuggehalli M. Ravindra
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Paper Abstract

Recent developments in HgCdTe photovoltaic detector technology are reviewed. The status of related areas in China are introduced. Some aspects of research work on device physics and technology conducted in the authors' laboratories are discussed. These include: the performance of HgCdTe photodiodes for IR fiber communication; the effects of field- enhanced generation-recombination and imperfections of the pn junction on HgCdTe photodiode I-V characteristics; and an analysis of the dependence of energy gap of HgCdTe on temperature and composition.

Paper Details

Date Published: 1 September 1992
PDF: 11 pages
Proc. SPIE 1685, Infrared Detectors and Focal Plane Arrays II, (1 September 1992); doi: 10.1117/12.137795
Show Author Affiliations
Fei Ming Tong, Shanghai Institute of Technical Physics (China)
Henry X. Yuan, Shanghai Institute of Technical Physics (China)
Xiuzhen Yang, Shanghai Institute of Technical Physics (China)
Nuggehalli M. Ravindra, New Jersey Institute of Technology (United States)

Published in SPIE Proceedings Vol. 1685:
Infrared Detectors and Focal Plane Arrays II
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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