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Proceedings Paper

Thin film transfer of InAlAs/InGaAs MSM photodetector or InGaAsP lasers onto GaAs or Si substrates
Author(s): C. Schwartz; S. Xin; Wen I. Wang; C. L. Shieh; Jim Y. Chi; Craig A. Armiento; Paul O. Haugsjaa; Andrew J. Negri
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Paper Abstract

We have demonstrated the fabrication of two structures achieved by the thin ifim transfer technique: back4lluminated InAlAsfInGaAs metal. semiconducthr-metal (MSM) detectors with buried interdigitated fingers on GaAs substrates; and long wavelength InGaAsP lasers on GaAs or Si substrates. For optoelectromc system applications, one often considers the use of a single material system for both the optical and electronic components on the chip, because it is not complicated by lattice mismatch. Compared to epitaxial growth of latticemismatched material systems, such as GaAs on Si, the thin ifim transfer technique does not result in a substantial number of misfit dislocations which can adversely affect device performance. The results we obtained demonstrate the feasibility of the thin film transfer process and point to the potential integration of OEICs and other components fabricated from a variety of materials on a common host substrate.

Paper Details

Date Published: 3 September 1992
PDF: 8 pages
Proc. SPIE 1680, High-Speed Electronics and Optoelectronics, (3 September 1992); doi: 10.1117/12.137712
Show Author Affiliations
C. Schwartz, Columbia Univ. (United States)
S. Xin, Columbia Univ. (United States)
Wen I. Wang, Columbia Univ. (United States)
C. L. Shieh, GTE Labs. Inc. (United States)
Jim Y. Chi, GTE Labs. Inc. (United States)
Craig A. Armiento, GTE Labs. Inc. (United States)
Paul O. Haugsjaa, GTE Labs. Inc. (United States)
Andrew J. Negri, GTE Labs. Inc. (United States)

Published in SPIE Proceedings Vol. 1680:
High-Speed Electronics and Optoelectronics
John Edward Bowers; Umesh K. Mishra, Editor(s)

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