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Proceedings Paper

Monte Carlo simulation of the coupled coherent and incoherent dynamics in photoexcited semiconductors
Author(s): F. Rossi; Tilmann Kuhn
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Paper Abstract

The ultrafast dynamics of photoexcited carriers in a semiconductor is investigated by means of a Monte Carlo approach. In addition to a 'conventional' Monte Carlo simulation, the coherence of the external light field and the resulting coherence in the carrier system is fully taken into account. This allows us to treat the correct time-dependence of the generation process showing a time-dependent line-width associated with a recombination from states off- resonance due to stimulated emission. The subsequent dephasing of the carriers due to scattering processes is analyzed. In addition, the simulation contains the carrier-carrier interaction in Hartree-Fock approximation giving rise to a band-gap renormalization and excitonic effects which cannot be treated in a conventional Monte Carlo simulation.

Paper Details

Date Published: 21 October 1992
PDF: 12 pages
Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); doi: 10.1117/12.137675
Show Author Affiliations
F. Rossi, Univ. di Modena (Italy)
Tilmann Kuhn, Univ. di Modena (Italy)

Published in SPIE Proceedings Vol. 1677:
Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors
Robert R. Alfano, Editor(s)

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