Proceedings Paper
Effect of Al mole fraction on decay profile of photoinduced IR absorption and the determination of the critical value of xc for AlxGa1-xAs| Format | Member Price | Non-Member Price |
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Paper Abstract
The hot carrier dynamics in the satellite X valley in AlxGa1-xAs was measured by femtosecond pump-probe infrared absorption spectroscopy. The dynamics of the X valley electrons for samples with x = 0.439. The critical value of xc corresponding to the direct-to-indirect band gap transition for AlxGa1-xAs was determined to be 0.412 +/- 0.006.
Paper Details
Date Published: 21 October 1992
PDF: 6 pages
Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); doi: 10.1117/12.137671
Published in SPIE Proceedings Vol. 1677:
Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors
Robert R. Alfano, Editor(s)
PDF: 6 pages
Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); doi: 10.1117/12.137671
Show Author Affiliations
Wubao B. Wang, Institute for Ultrafast Spectroscopy and Lasers/CUNY (United States)
Robert R. Alfano, Institute for Ultrafast Spectroscopy and Lasers/CUNY (United States)
Robert R. Alfano, Institute for Ultrafast Spectroscopy and Lasers/CUNY (United States)
David M. Szmyd, Solar Energy Research Institute (United States)
Arthur J. Nozik, Solar Energy Research Institute (United States)
Arthur J. Nozik, Solar Energy Research Institute (United States)
Published in SPIE Proceedings Vol. 1677:
Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors
Robert R. Alfano, Editor(s)
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