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Proceedings Paper

In-situ x-ray studies of OMVPE growth
Author(s): Paul H. Fuoss; Frank J. Lamelas; P. Imperatori; David W. Kisker; G. Brian Stephenson; Sean Brennan
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Paper Abstract

This paper summarizes recent in situ x-ray analyses of the growth of GaAs by organometallic vapor phase epitaxy (OMVPE). This growth was carried out using tertiarybutylarsine (TBAs) and trimethylgallium (TMG) as the source materials. Examples of in situ x-ray measurements are given including x-ray absorption studies of gas phase behavior and x-ray scattering studies of layer-by-layer growth.

Paper Details

Date Published: 2 September 1992
PDF: 8 pages
Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992);
Show Author Affiliations
Paul H. Fuoss, AT&T Bell Labs. (United States)
Frank J. Lamelas, AT&T Bell Labs. (United States)
P. Imperatori, AT&T Bell Labs. (United States)
David W. Kisker, IBM Research Div. (United States)
G. Brian Stephenson, IBM Research Div. (United States)
Sean Brennan, Stanford Synchrotron Radiation Lab. (United States)

Published in SPIE Proceedings Vol. 1676:
Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication
Roger J. Malik; Chris J. Palmstrom; Salah M. Bedair; Harold G. Craighead; Randall L. Kubena, Editor(s)

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