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Proceedings Paper

MBE growth of (GaAs)m/(AlAs)n short-period superlattices and their application in fabricating visible lasers
Author(s): Naresh Chand; Niloy K. Dutta; John Lopata; Robert Hull; Michael Geva
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Paper Abstract

We report on the fabrication and performance characteristics of (GaAs)3/(AlAs)1 short-period superlattices (SPSs) quantum well lasers emitting at 737 nm. The SPSs consists of eight periods of 3 and 1 ML of GaAs and AlAs, respectively. The (GaAs)m/(AlAs)n SPSs have many advantages over their equivalent AlGaAs alloy counterparts. The broad area threshold current density, Jth, for 500 micrometers long lasers is 510 A cm-2. The 500 micrometers -long ridge waveguide lasers have a threshold current of 48 mA with a characteristic temperature of 68 K in the temperature range 19 to 60 degree(s)C. The external differential quantum efficiency near threshold is 0.58 mW/mA/facet. The devices lase in a single mode with spectral width within the resolution limit of the spectrometer.

Paper Details

Date Published: 2 September 1992
PDF: 7 pages
Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); doi: 10.1117/12.137654
Show Author Affiliations
Naresh Chand, AT&T Bell Labs. (United States)
Niloy K. Dutta, AT&T Bell Labs. (United States)
John Lopata, AT&T Bell Labs. (United States)
Robert Hull, AT&T Bell Labs. (United States)
Michael Geva, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1676:
Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication
Roger J. Malik; Chris J. Palmstrom; Salah M. Bedair; Harold G. Craighead; Randall L. Kubena, Editor(s)

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