Over the last few years, surface emitting injection lasers have been widely studied in various laboratories around the world.' The principal advantages of these lasers over regular cleaved facet semiconductor lasers are (i) single frequency operation by design, (ii) narrow circular beam pattern and (iii) two-dimensional array fabrication. The latter is very important for two dimensional parallel optical interconnection for switching and computing applications. The schematic of a surface emitting laser structure is shown in Fig. 1 . Thestructure has multilayer stacks of AlAs and Al0 1Ga09As on either side of a GaAs active region. The top mirror is doped p-type and the bottom mirror is doped n-type. The entire layer structure is grown by molecular beam epitaxy over a n-GaAs substrate.

Date Published: 2 September 1992
PDF: 5 pages
Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); doi: 10.1117/12.137648

Published in SPIE Proceedings Vol. 1676:
Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication
Roger J. Malik; Chris J. Palmstrom; Salah M. Bedair; Harold G. Craighead; Randall L. Kubena, Editor(s)