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Proceedings Paper

Observation of bulk-like LO phonons in GaAs/AlxGa1-xAs superlattices and quantum wells
Author(s): Abdellatif Bouchalkha; D. S. Kim; Jin-Joo Song; John F. Klem
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Paper Abstract

Picosecond pulses are used to measure the hot phonon generation rate ((partial)Nq/(partial)t) of Raman active GaAs LO phonons in several GaAs/AlxGa1-xAs superlattices (SL's) and quantum wells (QW's). Drastic increase in (partial)Nq/(partial)t is observed as the barrier width (Lb) decreased below a critical value for SL's with x >= 0.4. This is interpreted as due to a phonon transition from confinement to propagation. In contrast, for x b's considered. We have also observed the existence of a critical x equals x0 below which the LO phonons are no longer confined. Estimate of the LO phonon penetration depth into the barriers are also obtained for the different x values.

Paper Details

Date Published: 3 September 1992
PDF: 7 pages
Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137636
Show Author Affiliations
Abdellatif Bouchalkha, Oklahoma State Univ. (United States)
D. S. Kim, AT&T Bell Labs. (United States)
Jin-Joo Song, Oklahoma State Univ. (United States)
John F. Klem, Sandia National Labs. (United States)

Published in SPIE Proceedings Vol. 1675:
Quantum Well and Superlattice Physics IV
Gottfried H. Doehler; Emil S. Koteles, Editor(s)

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