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Proceedings Paper

Temperature-dependent transition from two-dimensional to three-dimensional growth in highly strained InxGa1-xAs/GaAs (x>0.36) single quantum wells
Author(s): S. M. Wang; Thorvald G. Andersson; M. J. Ekenstedt
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Paper Abstract

The critical layer thickness (CLT), based on the transition from two dimensional to three dimensional (3D) growth, was investigated by the use of photoluminescence in highly strained InxGa1-xAs/GaAs (0.36

Paper Details

Date Published: 3 September 1992
PDF: 8 pages
Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137628
Show Author Affiliations
S. M. Wang, Chalmers Univ. of Technology (Sweden)
Thorvald G. Andersson, Chalmers Univ. of Technology (Sweden)
M. J. Ekenstedt, Chalmers Univ. of Technology (Sweden)

Published in SPIE Proceedings Vol. 1675:
Quantum Well and Superlattice Physics IV
Gottfried H. Doehler; Emil S. Koteles, Editor(s)

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