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Proceedings Paper

Experimental investigation of auger recombination processes in strained-layer quantum well systems
Author(s): Mingcheng Wang; K. Kash; Chung-En Zah; Rajaram J. Bhat
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Paper Abstract

To understand the feasibility of using strain to reduce the Auger recombination rate of 1.5 micrometers laser, we have directly measured the carrier lifetime in strained-layer InGaAs/AlGaInAs quantum well systems, using time-resolved photoluminescence measurements. We find that the Auger recombination rate can be reduced by applying either biaxial compressive or tensile strain. A longer radiative carrier lifetime is observed for the tensile-strained materials. The effect of strain and quantum confinement on the carrier lifetime is discussed.

Paper Details

Date Published: 3 September 1992
PDF: 10 pages
Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137626
Show Author Affiliations
Mingcheng Wang, Univ. of Illinois/Urbana-Champaign (Taiwan)
K. Kash, Bell Communications Research (United States)
Chung-En Zah, Bell Communications Research (United States)
Rajaram J. Bhat, Bell Communications Research (United States)

Published in SPIE Proceedings Vol. 1675:
Quantum Well and Superlattice Physics IV
Gottfried H. Doehler; Emil S. Koteles, Editor(s)

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