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Proceedings Paper

Raman scattering of LO bulk-like and interface modes in GaAs/AlAs superlattices
Author(s): Zhao-Ping Wang; He Xiang Han; Guohua Li; Klaus H. Ploog
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Paper Abstract

(GaAs)6(AlAs)6 sample was grown on [001]-oriented semi-insulating GaAs substrate by MBE. The Raman scattering was measured at room temperature and under off- and in-resonance conditions. The GaAs even and odd modes were observed in the polarized and depolarized spectra, respectively, while the interface modes appear in both configurations. The second-order Raman spectra show that the polarized spectra are composed of the overtones and combinations of the even and interface modes, while the depolarized spectra are composed of the combinations of one odd mode and one even mode or one interface mode.

Paper Details

Date Published: 3 September 1992
PDF: 7 pages
Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137597
Show Author Affiliations
Zhao-Ping Wang, Institute of Semiconductors (China)
He Xiang Han, Institute of Semiconductors (China)
Guohua Li, Institute of Semiconductors (China)
Klaus H. Ploog, Max-Planck-Institut fuer Festkoerperforschung (Germany)

Published in SPIE Proceedings Vol. 1675:
Quantum Well and Superlattice Physics IV
Gottfried H. Doehler; Emil S. Koteles, Editor(s)

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