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Proceedings Paper

Optical absorption associated to shallow impurity states in GaAs-(Ga,Al)As quantum wells: electric-field effects
Author(s): Luiz O. Oliveira; Rosana B. Santiago; J. d'Albuquerque e Castro
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Paper Abstract

The optical-absorption spectra associated with transitions between the n equals 1 valence subband and the donor-impurity band and between the acceptor-impurity band and the n equals 1 conduction subband have been calculated for GaAs-(Ga,Al)As quantum-wells under constant applied electric field perpendicular to the interfaces. We have described the impurity states within a variational scheme in the effective-mass approximation. The distribution of impurities in the quantum well has been assumed to be homogeneous and interaction between impurities neglected. As a general feature, the impurity-related optical absorption for finite electric fields exhibits three van Hove-like singularities corresponding to the binding energies associated with impurities at the two edges of the quantum well and at the position at which the binding energy has a maximum.

Paper Details

Date Published: 3 September 1992
PDF: 10 pages
Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137596
Show Author Affiliations
Luiz O. Oliveira, Univ. Estadual de Campinas (Brazil)
Rosana B. Santiago, Ctr. Brasileiro de Pesquisas Fisicas (Brazil)
J. d'Albuquerque e Castro, Univ. Federal Fluminense (Brazil)

Published in SPIE Proceedings Vol. 1675:
Quantum Well and Superlattice Physics IV
Gottfried H. Doehler; Emil S. Koteles, Editor(s)

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