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Proceedings Paper

Acceptor-related photoluminescence study of GaAs (Ga,Al)As quantum-well wires
Author(s): Luiz O. Oliveira; A. Latge; Nelson Porras-Montenegro
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Paper Abstract

Acceptor-related photoluminescence spectra are calculated for both homogeneous and on- center spike-doped distribution of acceptors in a cylindrical GaAs-(Ga,Al)As quantum-well wire. Results are dependent on the temperature, on the choice of the quasi-Fermi energy level of the conduction-subband electron gas and on the distribution of acceptors in the wire. The photoluminescence spectra corresponding to a on-center spike-doped Gaussian distribution show a peak for energies associated with on-center impurity states, as it is expected, whereas for a homogeneous distribution of acceptors in the well we essentially found an edge in the spectra associated to transitions involving on-center acceptors and a peaked structure related to the onset of transitions from the conduction subband to on-edge acceptors.

Paper Details

Date Published: 3 September 1992
PDF: 10 pages
Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137590
Show Author Affiliations
Luiz O. Oliveira, Univ. Estadual de Campinas (Brazil)
A. Latge, Univ. Federal Fluminense (Brazil)
Nelson Porras-Montenegro, Univ. del Valle (Colombia)

Published in SPIE Proceedings Vol. 1675:
Quantum Well and Superlattice Physics IV
Gottfried H. Doehler; Emil S. Koteles, Editor(s)

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