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Proceedings Paper

Vacancy-enhanced interdiffusion of quaternary quantum wells
Author(s): Emil S. Koteles; A. N. M. Masu Choudhury; Boris S. Elman; Paul Melman; Ariel Levy; M. A. Koza; Rajaram J. Bhat
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Paper Abstract

The use of vacancy enhanced interdiffusion to accurately and reproducibly modify quantum well (QW) shapes from abrupt (the square, as-grown shape) to rounded in a spatially selective manner has now been demonstrated in many binary and ternary lattice matched and strained material systems. The processing increased the effective bandgaps of the QWs significantly. We now report on vacancy enhanced interdiffusion studies in quaternary quantum wells (InGaAsP wells with InP barriers or InGaAs wells with InGaAsP barriers) grown nominally lattice matched on InP substrates using metalorganic vapor phase epitaxy. Essentially the same behavior with processing parameters was observed as in the previous systems with only slight changes due, probably, to modified strain. Thus it should be possible to utilize this simple process to integrate optoelectronic devices with differing functions in these long wavelength systems.

Paper Details

Date Published: 3 September 1992
PDF: 8 pages
Proc. SPIE 1675, Quantum Well and Superlattice Physics IV, (3 September 1992); doi: 10.1117/12.137583
Show Author Affiliations
Emil S. Koteles, GTE Labs. Inc. (United States)
A. N. M. Masu Choudhury, GTE Labs. Inc. (United States)
Boris S. Elman, GTE Labs. Inc. (United States)
Paul Melman, GTE Labs. Inc. (United States)
Ariel Levy, GTE Labs. Inc. (United States)
M. A. Koza, Bell Communications Research (United States)
Rajaram J. Bhat, Bell Communications Research (United States)

Published in SPIE Proceedings Vol. 1675:
Quantum Well and Superlattice Physics IV
Gottfried H. Doehler; Emil S. Koteles, Editor(s)

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