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Proceedings Paper

Simulation fidelity in microlithography
Author(s): Eytan Barouch; Uwe Hollerbach; Steven A. Orszag; Martin C. Peckerar; Milton Rebbert
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Paper Abstract

Ground truth comparison between our advanced simulation modules and specific sets of experiments is presented, and simulation fidelity is evaluated. The resists described below are SNR248 negative chemically amplified deep-UV resist, KTI895i positive I-line resist, Shipley ANR negative chemically amplified I-line resist, and SMP1400 positive G-line resist. The simulation is composed of several modules: aerial image calculation, exposure, post-exposure baking (PEB) as reaction-diffusion equations, and dissolution employing reaction-diffusion equations as well as Hamilton-Jacobi systems. The experiments described display variations in exposure energies to determine process latitude and cd control, defocus, as well as line shape. Detailed comparisons between experiments and simulations are exhibited for a wide range of photolithographic applications.

Paper Details

Date Published: 9 July 1992
PDF: 26 pages
Proc. SPIE 1671, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II, (9 July 1992); doi: 10.1117/12.136039
Show Author Affiliations
Eytan Barouch, Princeton Univ. (United States)
Uwe Hollerbach, Princeton Univ. (United States)
Steven A. Orszag, Princeton Univ. (United States)
Martin C. Peckerar, Naval Research Lab. (United States)
Milton Rebbert, Naval Research Lab. (United States)

Published in SPIE Proceedings Vol. 1671:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II
Martin C. Peckerar, Editor(s)

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