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Proceedings Paper

Computational method for the correction of proximity effect in electron-beam lithography (Poster Paper)
Author(s): Chih-Yuan Chang; Gerry Owen; Roger Fabian W. Pease; Thomas Kailath
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Paper Abstract

Dose correction is commonly used to compensate for the proximity effect in electron lithography. The computation of the required dose modulation is usually carried out using 'self-consistent' algorithms that work by solving a large number of simultaneous linear equations. However, there are two major drawbacks: the resulting correction is not exact, and the computation time is excessively long. A computational scheme, as shown in Figure 1, has been devised to eliminate this problem by the deconvolution of the point spread function in the pattern domain. The method is iterative, based on a steepest descent algorithm. The scheme has been successfully tested on a simple pattern with a minimum feature size 0.5 micrometers , exposed on a MEBES tool at 10 KeV in 0.2 micrometers of PMMA resist on a silicon substrate.

Paper Details

Date Published: 9 July 1992
PDF: 7 pages
Proc. SPIE 1671, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II, (9 July 1992); doi: 10.1117/12.136024
Show Author Affiliations
Chih-Yuan Chang, Stanford Univ. (United States)
Gerry Owen, Stanford Univ. (United States)
Roger Fabian W. Pease, Stanford Univ. (United States)
Thomas Kailath, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 1671:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II
Martin C. Peckerar, Editor(s)

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