As part of the development of a synchrotron-based x-ray lithography beamline, progress has been made in designing an optics system which meets the current industrial requirements. The primary goals of the optics are to achieve 0.25 micrometers line resolution over a 50-mm-wide by 25-mm-tall exposure field. The beamline optics must also provide a 5% power uniformity over the exposure field and enough power to achieve a 60-wafer-per-hour throughput with 20 exposure fields. In this paper, a description of a beamline optics system is presented for use with the Superconducting X-ray Lithography Source (SXLS) being built by Brookhaven National Laboratory with assistance from the Grumman Corporation. The basic design approach, performance characteristics, and some design data will be discussed.

Date Published: 9 July 1992
PDF: 9 pages
Proc. SPIE 1671, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II, (9 July 1992); doi: 10.1117/12.136018

Published in SPIE Proceedings Vol. 1671:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II
Martin C. Peckerar, Editor(s)