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Proceedings Paper

Study of single-layer e-beam lithography for x-ray mask making
Author(s): Yukiko Kikuchi; Yuji Takigami; Ichiro Mori; Yoshio Gomei
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Paper Abstract

The possibilities of sub-quarter-micron pattern fabrication by e-beam lithography with single- layer resist was studied on 0.5 micrometers thick W x-ray mask absorber. Calculation was made to evaluate the parameters determining the e-beam dose profile in the resist. It was found that at the incident energy of 40 keV pattern contrast in the resist, whose thickness is 0.2 micrometers , is homogenized through the depth. The experimental result proved that 0.15 micrometers line/space can be resolved by using a high contrast resist with this thickness.

Paper Details

Date Published: 9 July 1992
PDF: 10 pages
Proc. SPIE 1671, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II, (9 July 1992); doi: 10.1117/12.136010
Show Author Affiliations
Yukiko Kikuchi, Toshiba Corp. (Japan)
Yuji Takigami, Toshiba Corp. (Japan)
Ichiro Mori, Toshiba Corp. (Japan)
Yoshio Gomei, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 1671:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing II
Martin C. Peckerar, Editor(s)

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