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Proceedings Paper

Epitaxial growth of p+ silicon on a backside-thinned CCD for enhanced UV response
Author(s): Michael E. Hoenk; Paula J. Grunthaner; Frank J. Grunthaner; Robert W. Terhune; Masoud M. Fattahi
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Paper Abstract

We have used low temperature molecular beam epitaxy to grow p+ silicon on a backside-thinned Reticon 512x5 12 CCD. The techniques for preparing the CCD for the growth and the processing conditions are discussed. A 50 A layer of silicon doped with 3x102 B/cm3 was grown at a substrate temperature of 450C. The ultraviolet quantum efficiency of the modified CCD was significantly higher than that of a CCD with an untreated back surface. Charging the back surface of the modified CCD with a Uv flood did not affect the quantum efficiency indicating that the bands were pinned by the added p+ layer. Gold contamination measured by secondary ion mass spectrometry to have a concentration of 1 x 1 0 18 cm3 near the back surface caused the UV quantum efficiency to be lower than optimum by reducing the minority carrier lifetime. 2.

Paper Details

Date Published: 12 August 1992
PDF: 9 pages
Proc. SPIE 1656, High-Resolution Sensors and Hybrid Systems, (12 August 1992); doi: 10.1117/12.135951
Show Author Affiliations
Michael E. Hoenk, Jet Propulsion Lab. (United States)
Paula J. Grunthaner, Jet Propulsion Lab. (United States)
Frank J. Grunthaner, Jet Propulsion Lab. (United States)
Robert W. Terhune, Jet Propulsion Lab. (United States)
Masoud M. Fattahi, EG&G Reticon (United States)

Published in SPIE Proceedings Vol. 1656:
High-Resolution Sensors and Hybrid Systems
Morley M. Blouke; Winchyi Chang; Laurence J. Thorpe; Rajinder P. Khosla, Editor(s)

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