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Proceedings Paper

Electroluminescent devices with different insulator/semiconductor interfaces prepared by rf sputtering
Author(s): Chin-Tsar Hsu; Yan-Kuin Su; Meiso Yokoyama
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Paper Abstract

In order to evaluate the interface properties of TFEL with stacked layer insulator structure, four kinds of samples with different insulating layers have been studied. It was found that the EL device with a glass/indium tin oxide/BaTiO3/ZnS:TbF3/HfO2/Ta2O5/HfO2/Al structure exhibited higher brightness and higher efficiency than the other devices.

Paper Details

Date Published: 27 October 1992
PDF: 4 pages
Proc. SPIE 1815, Display Technologies, (27 October 1992); doi: 10.1117/12.131327
Show Author Affiliations
Chin-Tsar Hsu, National Cheng Kung Univ. (Taiwan)
Yan-Kuin Su, National Cheng Kung Univ. (Taiwan)
Meiso Yokoyama, National Cheng Kung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 1815:
Display Technologies
Shu-Hsia Chen; Shin-Tson Wu, Editor(s)

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