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Proceedings Paper

Low-temperature-processed poly-Si TFT using solid-phase-crystallization and liquid-phase-deposition gate oxide
Author(s): Ching-Fa Yeh; Yu-Chi Yang; Tzung-Zu Yang; Chun-Lin Chen; Tai Chiung Hsieh
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Paper Abstract

Polysilicon thin-film transistors (TFTs) using solid phase crystallization (SPC) and liquid- phase deposition (LPD) gate oxide are first realized by low-temperature processes (< 600 degree(s)C). Raman spectra of poly-Si layer reveals that LPCVD a-Si layer following with Si+ implantation and SPC at 600 degree(s)C for 48 hours is a superior starting material for active layer. The method of LPD-SiO2 is described. The physical, chemical and electrical properties of such a new dielectric layer are clarified. The TFTs exhibit sufficient performance for pixel transistors. The field effect mobility reveals much dependence on channel length. The off-state current comprise the resistive current, the thermal emission current and the field enhanced generation current via trap states.

Paper Details

Date Published: 27 October 1992
PDF: 7 pages
Proc. SPIE 1815, Display Technologies, (27 October 1992); doi: 10.1117/12.131309
Show Author Affiliations
Ching-Fa Yeh, National Chiao Tung Univ. (Taiwan)
Yu-Chi Yang, National Chiao Tung Univ. (Taiwan)
Tzung-Zu Yang, National Chiao Tung Univ. (Taiwan)
Chun-Lin Chen, National Chiao Tung Univ. (Taiwan)
Tai Chiung Hsieh, National Chiao Tung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 1815:
Display Technologies
Shu-Hsia Chen; Shin-Tson Wu, Editor(s)

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