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Proceedings Paper

Effect of temperature on I-V characteristic of a-Si:H photodiode
Author(s): Kuan-Lun Chang; Ching-Fa Yeh
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Paper Abstract

A promising contact-type linear image sensor, 16 bit/mm high resolution Schottky a-Si:H photodiodes have been fabricated, and its temperature effect on I-V characteristics has been clarified. To achieve excellent small darkcurrent and improve Ip/Id ratio, the a-Si:H photodiodes with the passivation layer being annealed at 200 degree(s)C in air for 30 min is found essentially necessary. In the reverse bias mode, the darkcurrent increases with temperature and doubles for every 8.89 degree(s)C rise, while the photocurrent exhibits little affect below 100 degree(s)C.

Paper Details

Date Published: 26 October 1992
PDF: 7 pages
Proc. SPIE 1814, Optical Sensors, (26 October 1992); doi: 10.1117/12.131271
Show Author Affiliations
Kuan-Lun Chang, National Chiao Tung Univ. (Taiwan)
Ching-Fa Yeh, National Chiao Tung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 1814:
Optical Sensors
Chih-Hong Chen; Tieh-Chu Wang, Editor(s)

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