Proceedings Paper
High-power 630-640nm GaInP/GaAlInP laser diodes| Format | Member Price | Non-Member Price |
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Paper Abstract
High-power visible laser diodes operating at 630 - 640 nm have been demonstrated. The devices have a GaInP/GaAlInP single quantum well, graded-index separate confinement heterojunction. For 100-micrometers -broadstripe uncoated lasers, pulsed threshold current of 740 A/cm2 and output powers as high as 1.5 W/facet (total 3 W) at room temperature were achieved by optimizing the device cavity length. For 10-micrometers -ridge-waveguide lasers, 40 mW CW output powers with single-longitudinal mode and stable transverse mode have also been demonstrated. We also present, for the first time, high power 635 nm surface-emitting lasers with pulsed output powers of 170 mW.
Paper Details
Date Published: 23 October 1992
PDF: 9 pages
Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); doi: 10.1117/12.131264
Published in SPIE Proceedings Vol. 1813:
Optoelectronic Component Technologies
GouChung Chi; Chi-Shain Hong, Editor(s)
PDF: 9 pages
Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); doi: 10.1117/12.131264
Show Author Affiliations
Szutsun Simon Ou, TRW, Inc. (United States)
Jane J. Yang, TRW, Inc. (United States)
Michael Jansen, TRW, Inc. (United States)
Jane J. Yang, TRW, Inc. (United States)
Michael Jansen, TRW, Inc. (United States)
Richard J. Fu, Applied Optronics Corp. (United States)
C. J. Hwang, Applied Optronics Corp. (United States)
C. J. Hwang, Applied Optronics Corp. (United States)
Published in SPIE Proceedings Vol. 1813:
Optoelectronic Component Technologies
GouChung Chi; Chi-Shain Hong, Editor(s)
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