Proceedings Paper
In-situ observation of HB GaAs crystal growth| Format | Member Price | Non-Member Price |
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Paper Abstract
In-situ monitoring of horizontal Bridgman (HB) growth of GaAs crystals through the furnace window can reveal whether the growth condition is good or not. Good growth conditions are characterized by straight melt/crystal interface and (111) facet growth striations on the grown crystal surface. Abnormal growth conditions including twinning, lineaging and polycrystallizing in the growing crystals usually show curved or irregular-shaped melt/crystal interface and various slanted lines distributed over the crystal surfaces. The monitoring process can spot these defective conditions in the early stage of their formations, and growth parameters thus can be adjusted in real time for correction. It provides a convenient way to help understand the relations between growth parameters and defects formation. The yield and quality of the M2T-HB grown crystals are both increased by this method.
Paper Details
Date Published: 23 October 1992
PDF: 10 pages
Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); doi: 10.1117/12.131252
Published in SPIE Proceedings Vol. 1813:
Optoelectronic Component Technologies
GouChung Chi; Chi-Shain Hong, Editor(s)
PDF: 10 pages
Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); doi: 10.1117/12.131252
Show Author Affiliations
J. Y. Kuo, Industrial Technology Research Institute (Taiwan)
Y. D. Guo, Industrial Technology Research Institute (Taiwan)
Y. D. Guo, Industrial Technology Research Institute (Taiwan)
Juei-Tsang Hsu, Industrial Technology Research Institute (Taiwan)
Published in SPIE Proceedings Vol. 1813:
Optoelectronic Component Technologies
GouChung Chi; Chi-Shain Hong, Editor(s)
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