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Proceedings Paper

Analysis of electrical properties of delta-doped layers
Author(s): T. M. Cheng; Ming Shiann Feng; Huey Liang Hwang
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Paper Abstract

A numerical program which solves Poisson equation and Schrodinger equation self- consistently was developed. Many structures of the delta-doped layers structures had been simulated including different dopant concentrations, different length scales of dopant confinement, and delta doping in quantum well structures. A quantum mechanical model of C- V profile was adopted to derive the 'apparent C-V profile' of the delta-doped layer and which is compared with the dopant distribution and free carrier distribution. The electron concentration saturation, enhanced electron mobility, and the condition for minimum FWHM (full width at half maximum) of electron distribution can be successfully explained with the results from our study. The analyses are consistent with the experiment results of other groups. This could provide a tool for the delta-doped quantum well HEMT.

Paper Details

Date Published: 23 October 1992
PDF: 6 pages
Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); doi: 10.1117/12.131247
Show Author Affiliations
T. M. Cheng, National Tsing Hua Univ. (Taiwan)
Ming Shiann Feng, National Chiao Tung Univ. (Taiwan)
Huey Liang Hwang, National Tsing Hua Univ. (Taiwan)

Published in SPIE Proceedings Vol. 1813:
Optoelectronic Component Technologies
GouChung Chi; Chi-Shain Hong, Editor(s)

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