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Proceedings Paper

InGaSb/GaSb strained quantum wells by MOCVD
Author(s): Ching Hwang Su; Yan-Kuin Su; Fuh Shyang Juang
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Paper Abstract

Bulks layers of both GaSb and InGaSb have been successfully deposited by metal-organic chemical vapor deposition (MOCVD). The transition energies in the GaSb/InxGa1-xSb single quantum well have been calculated using a model which takes into account the elastic strain and quantum well effects. The shifts of transitions energies as a function of In solid compositions and well widths for 300 K and 12 K, respectively, were calculated. The transition energies from conduction bands to light holes at 12 K were found to be higher than the GaSb energy-gap with In composition below 0.3. Thus, the light hole band cannot be confined in the quantum wells with In composition between 0 and 0.3. The photoluminescence (PL) spectra of quantum well structures with different well widths were presented. The transition energies obtained from the PL spectra were compared with theoretical predictions.

Paper Details

Date Published: 23 October 1992
PDF: 4 pages
Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); doi: 10.1117/12.131246
Show Author Affiliations
Ching Hwang Su, National Cheng Kung Univ. (Taiwan)
Yan-Kuin Su, National Cheng Kung Univ. (Taiwan)
Fuh Shyang Juang, National Cheng Kung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 1813:
Optoelectronic Component Technologies
GouChung Chi; Chi-Shain Hong, Editor(s)

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