The structures and performances of surface emitting AlGaInP green light emitting diodes (LEDs) with emission wavelength around 565 nm were studied. The AlGaInP green LEDs with epitaxial structure grown on P-type GaAs substrate showed the best performance. This is the first paper ever reported for the fabrication of AlGaInP LEDs using P-type GaAs as a substrate. In AlGaInP LED structure using P-type GaAs substrate, the highly conductive n- type AlInP was consequently used as a top confining layer and the current crowding problem was significantly improved. Therefore, the green electroluminescence (EL) was uniformly emitted from the surface of LED dice.

Date Published: 23 October 1992
PDF: 6 pages
Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); doi: 10.1117/12.131244

Published in SPIE Proceedings Vol. 1813:
Optoelectronic Component Technologies
GouChung Chi; Chi-Shain Hong, Editor(s)