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Proceedings Paper

Ridge-waveguide modified triple-quantum-well high-power AlGaAs laser grown by MOVPE
Author(s): MingCheng Hung; Kuen-Sane Din; Chiu-Ling Chen; Chuan-Ming Chang; Biing-Jye Lee
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Paper Abstract

The materials quality of the InxGa1-xAs epilayers with 0.28 xGa1-xAs were also grown on GaAs to study the strain relaxation process in the initial growth stage and their effects on the generation of dislocations. For the x equals 0.5 case, the thin InGaAs formed a high density and many small size coherent islands; while for x equals 1, they changed to a low density and much larger size relaxed islands. This shows that the growth of highly mismatched InxGa1-xAs/GaAs heterojunction (x >= 0.28) is a kinetically limited strain relaxation process. The large lattice mismatch (7.16%) between InAs and GaAs favors the early relaxation of InAs islands before they coalesce, this explains why the bulk material quality of the InAs is better than InxGa1-xAs with x equals 0.28, 0.5 and 0.75 in spit of its larger lattice mismatch.

Paper Details

Date Published: 23 October 1992
PDF: 6 pages
Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); doi: 10.1117/12.131231
Show Author Affiliations
MingCheng Hung, Industrial Technology Research Institute (Taiwan)
Kuen-Sane Din, Industrial Technology Research Institute (Taiwan)
Chiu-Ling Chen, Industrial Technology Research Institute (Taiwan)
Chuan-Ming Chang, Industrial Technology Research Institute (Taiwan)
Biing-Jye Lee, Industrial Technology Research Institute (Taiwan)

Published in SPIE Proceedings Vol. 1813:
Optoelectronic Component Technologies
GouChung Chi; Chi-Shain Hong, Editor(s)

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