The materials quality of the InxGa1-xAs epilayers with 0.28 xGa1-xAs were also grown on GaAs to study the strain relaxation process in the initial growth stage and their effects on the generation of dislocations. For the x equals 0.5 case, the thin InGaAs formed a high density and many small size coherent islands; while for x equals 1, they changed to a low density and much larger size relaxed islands. This shows that the growth of highly mismatched InxGa1-xAs/GaAs heterojunction (x >= 0.28) is a kinetically limited strain relaxation process. The large lattice mismatch (7.16%) between InAs and GaAs favors the early relaxation of InAs islands before they coalesce, this explains why the bulk material quality of the InAs is better than InxGa1-xAs with x equals 0.28, 0.5 and 0.75 in spit of its larger lattice mismatch.

Date Published: 23 October 1992
PDF: 6 pages
Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); doi: 10.1117/12.131231

Published in SPIE Proceedings Vol. 1813:
Optoelectronic Component Technologies
GouChung Chi; Chi-Shain Hong, Editor(s)