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Proceedings Paper

High-temperature InGaAs strained-quantum-well lasers (Invited Paper)
Author(s): Chi-Shain Hong
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Paper Abstract

Ridge-waveguide InGaAs/GaAs strained quantum-well lasers with high temperature (225 degree(s)C), high power (350 mW), and high reliability characteristics have been successfully demonstrated. The paper reviews recent progress in the laser design and performance with respect to temperature, power, and reliability for fiber-optic amplifier and avionics applications.

Paper Details

Date Published: 23 October 1992
PDF: 5 pages
Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); doi: 10.1117/12.131227
Show Author Affiliations
Chi-Shain Hong, Boeing Defense & Space Group (United States)

Published in SPIE Proceedings Vol. 1813:
Optoelectronic Component Technologies
GouChung Chi; Chi-Shain Hong, Editor(s)

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