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Proceedings Paper

Fast and simple checking methods of the doping concentration in semiconductors
Author(s): Zsolt J. Horvath
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Paper Abstract

Four different possibilities are proposed for the fast checking of doping and impurity concentration in semiconductors. The proposition is based on the characteristic experimental concentration dependence of the breakdown voltage, the slope of the reverse I-V characteristics, the ac conductivity, and the capacitance at zero bias, obtained in planar and mesa Au/Cr/n-GaAs Schottky contacts.

Paper Details

Date Published: 1 August 1992
PDF: 5 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131061
Show Author Affiliations
Zsolt J. Horvath, Research Institute for Technical Physics (Hungary)

Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92
Andrzej Sowinski; Jan Grzybowski; Witold T. Kucharski; Ryszard S. Romaniuk, Editor(s)

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