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Proceedings Paper

Parameter determination of the polysilicon emitter interface for bipolar transistor
Author(s): M. M. Tkachenko; G. P. Kolomoets; V. N. Nazarenko
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Paper Abstract

The electrical parameters of polysilicon-contacted emitters are investigated. The emitter-base junction C-2-V plots demonstrated an anomaly because of charge occurrence at the polySi-monoSi interface. A critical analysis of well-known methods for emitter series resistance determination is carried out and the new method, which coupled the dc and ac measurement's dignities, is described. The procedure of emitter low-frequency noise determination is proposed and the experimental results received by this manner are presented.

Paper Details

Date Published: 1 August 1992
PDF: 10 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131023
Show Author Affiliations
M. M. Tkachenko, Industrial Institute (Ukraine)
G. P. Kolomoets, Industrial Institute (Ukraine)
V. N. Nazarenko, Industrial Institute (Ukraine)

Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92
Andrzej Sowinski; Jan Grzybowski; Witold T. Kucharski; Ryszard S. Romaniuk, Editor(s)

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