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Proceedings Paper

Composition and properties of PECVD silicon and boron nitrides films
Author(s): Zinoviy L. Akkerman; Nadezhda I. Fainer; Marina L. Kosinova; A. N. Korshunov; Yu. M. Rumjantsev; E. G. Salman; Natal'ya P. Sysoeva
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Paper Abstract

The processing dependent properties of PECVD SiNxCyHz and BNxHy thin insulating films deposited using hexamethyldisilazane (HMDS) or HMDS + NH3 mixture and borazine without and with helium dilution, respectively, were considered. The deposition temperature of the films was varied in the range of 50 - 500 degree(s)C. The results of investigations of the chemical composition, kinetics of growth, optical and electrical properties of the films are presented. The correlations between these properties and the chemical composition and growth conditions are established. It has been found that ammonia added to HMDS considerably improves the insulating properties of SiNxCyHz films. We can conclude that the ionic-type instability in the MIS-structure with BNxHy was caused by hydrogen, incorporated into the films during growth. The conditions of stable dielectric film preparation have been determined. The films can be used as insulators for microelectronic devices on compound semiconductors.

Paper Details

Date Published: 1 August 1992
PDF: 11 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131000
Show Author Affiliations
Zinoviy L. Akkerman, Institute of Inorganic Chemistry (Russia)
Nadezhda I. Fainer, Institute of Inorganic Chemistry (Russia)
Marina L. Kosinova, Institute of Inorganic Chemistry (Russia)
A. N. Korshunov, Institute of Inorganic Chemistry (Russia)
Yu. M. Rumjantsev, Institute of Inorganic Chemistry (Russia)
E. G. Salman, Institute of Inorganic Chemistry (Russia)
Natal'ya P. Sysoeva, Institute of Inorganic Chemistry (Russia)

Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92
Andrzej Sowinski; Jan Grzybowski; Witold T. Kucharski; Ryszard S. Romaniuk, Editor(s)

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