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Proceedings Paper

Ohmic contacts formation to GaAs by laser irradiation
Author(s): A. V. Chankin; G. N. Mikhailova; A. S. Seferov; Anurada Dhaul; R. Chander; I. Chandra
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Paper Abstract

A Q-switched ruby laser was applied for ohmic contacts formation to n-GaAs. A previously deposited composition of Au:Ge+Ni+Au was used as contact material. SIMS and V-A dependence measurements were carried out for contact characterization.

Paper Details

Date Published: 1 August 1992
PDF: 6 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.130990
Show Author Affiliations
A. V. Chankin, General Physics Institute (Russia)
G. N. Mikhailova, General Physics Institute (Russia)
A. S. Seferov, General Physics Institute (Russia)
Anurada Dhaul, Solid State Physics Lab. (India)
R. Chander, Solid State Physics Lab. (India)
I. Chandra, Solid State Physics Lab. (India)

Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92
Andrzej Sowinski; Jan Grzybowski; Witold T. Kucharski; Ryszard S. Romaniuk, Editor(s)

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