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Proceedings Paper

Nanolithography with metal halides
Author(s): Heinrich M. Jaeger; H. R. Borsje; Sybrand Radelaar
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Paper Abstract

We have used AlF3 as a negative electron beam resist and dry-etch mask for nanoscale device fabrication in both commercial beam writers and scanning (transmission) electron microscopes. Isolated features down to 15 nm have been made as well as square arrays of 20 nm dots-and-spaces.

Paper Details

Date Published: 1 August 1992
PDF: 5 pages
Proc. SPIE 1778, Imaging Technologies and Applications, (1 August 1992); doi: 10.1117/12.130965
Show Author Affiliations
Heinrich M. Jaeger, Univ. of Chicago (United States)
H. R. Borsje, Delft Institute of Microelectronics and Submicron Technology (Netherlands)
Sybrand Radelaar, Delft Institute of Microelectronics and Submicron Technology (Netherlands)

Published in SPIE Proceedings Vol. 1778:
Imaging Technologies and Applications
Robert J. Heaston, Editor(s)

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