Proceedings Paper
Small-field stepper for 193-nm lithography process development| Format | Member Price | Non-Member Price |
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Paper Abstract
A stepper operating at the 193-nm wavelength has been constructed for use in the development of resist processes. The stepper lens has a 4-mm field diameter and a 0.33 NA. The stepper uses an unnarrowed ArF excimer laser as the light source, and uses diffractive lenslet arrays to transform the low divergence excimer beam into a suitable pupil fill. The stepper is routinely used for resist studies and has been used to pattern lines and spaces as small as 0.15 ?m.
Paper Details
Date Published: 1 June 1992
PDF: 10 pages
Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); doi: 10.1117/12.130366
Published in SPIE Proceedings Vol. 1674:
Optical/Laser Microlithography V
John D. Cuthbert, Editor(s)
PDF: 10 pages
Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); doi: 10.1117/12.130366
Show Author Affiliations
David C. Shaver, Lincoln Lab./MIT (United States)
David M. Craig, Lincoln Lab./MIT (United States)
C. A. Marchi, Lincoln Lab./MIT (United States)
David M. Craig, Lincoln Lab./MIT (United States)
C. A. Marchi, Lincoln Lab./MIT (United States)
Mark A. Hartney, Lincoln Lab./MIT (United States)
Francis N. Goodall, Rutherford Appleton Lab. (United Kingdom)
Francis N. Goodall, Rutherford Appleton Lab. (United Kingdom)
Published in SPIE Proceedings Vol. 1674:
Optical/Laser Microlithography V
John D. Cuthbert, Editor(s)
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