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Proceedings Paper

Color centers photomasks produced by electron-beam lithography
Author(s): Raul Almeida Nunes; Sidnei Paciornik; Luiz C. Scavarda do Carmo
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Paper Abstract

In this paper we discuss the feasibility of using direct electron beam lithography in the production of a new type of photomask suitable for photolithography with both the g mercury line and KrF deep UV lasers. The masking effect is produced by the presence of molecular type defects - color centers - which show strong absorption bands in the visible and deep UV. The centers are created in a superficial layer of Lithium Fluoride (LiF) crystals by direct electron beam irradiation. A simple mask is presented and the photostability of the centers when submitted to various visible and UV photo-transposition steps is studied. The visible absorption band can withstand ~ 1000 exposures while the UV band can be used - 50 times. The use of this material reduces the number of necessary steps in photomask fabrication, eliminating the need for chemical procedures.

Paper Details

Date Published: 1 June 1992
PDF: 7 pages
Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); doi: 10.1117/12.130351
Show Author Affiliations
Raul Almeida Nunes, Pontifical Catholic Univ. of Rio de Janeiro (Brazil)
Sidnei Paciornik, Pontifical Catholic Univ. of Rio de Janeiro (Brazil)
Luiz C. Scavarda do Carmo, Pontifical Catholic Univ. of Rio de Janeiro (Brazil)

Published in SPIE Proceedings Vol. 1674:
Optical/Laser Microlithography V
John D. Cuthbert, Editor(s)

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