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I-line, DUV, VUV, or x ray?
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Paper Abstract

It is no longer possible to have just the best technology in the semiconductor equipment and materials market and remain successful. Each product tends to last for only one generation of IC devices. This high rate of imaging technology change means that the material or equipment manufacturer must have a large base of expertise to keep up with the rapidly changing needs and requirements of the technology. Also necessary is a large source of capital to finance development, manufacturing, and testing equipment. Unfortunately, the sequence of short business cycles, with limited lifetimes for each lithographic technology, is expected to continue for at least another ten years, until some technology or technologies, with long lifetimes through a large number of device generations, is firmly in place. The intent of this paper is to compare the potential IC manufacturing requirements, product timing, and the technological capabilities of i-line, DUV (248 nm), VUV (193 nm), and x-ray. From this we intend to project the technological potential of each. To do this we intend to determine the limiting resolution and DOF of each technology, evaluate the resist and processing capabilities, examine the engineering requirements. We will evaluate the impact of phase shift mask technology, surface imaging, and planarization and their impact on lithographic potential. From this information we will provide a comparison of these four technologies. This data will then be compared to IC device requirements and timetables from which a lithographic product need and lifetime relationship can be determined for each technology.

Paper Details

Date Published: 1 June 1992
PDF: 13 pages
Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); doi: 10.1117/12.130344
Show Author Affiliations
Donald W. Johnson, Microlithography Consulting Co., Inc. (United States)
Chris A. Mack, FINLE Technologies (United States)

Published in SPIE Proceedings Vol. 1674:
Optical/Laser Microlithography V
John D. Cuthbert, Editor(s)

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