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Proceedings Paper

Chromeless phase mask by resist silylation
Author(s): Lothar Bauch; Joachim J. Bauer; Helge H. Dreger; Ulrich A. Jagdhold; B. Lauche; Georg G. Mehliss
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Paper Abstract

The resolution of optical microlithography is limited by light diffraction. The contrast for the resist structuring is to low in the neighbour hood of the diffraction limited resolution. Special technologies for e.g. phase shifting, phase masks and spatial filtering techniques have the goal to increase the contrast for the lithographical process in the neighbour hood of the diffraction limit. An improvement of resolution of 0.1 to 0.2 pm compared with conventional image transfer are possible by skilful application this techniques

Paper Details

Date Published: 1 June 1992
PDF: 11 pages
Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); doi: 10.1117/12.130338
Show Author Affiliations
Lothar Bauch, Institut fuer Halbleiterphysik (Germany)
Joachim J. Bauer, Institut fuer Halbleiterphysik (Germany)
Helge H. Dreger, Institut fuer Halbleiterphysik (Germany)
Ulrich A. Jagdhold, Institut fuer Halbleiterphysik (Germany)
B. Lauche, Zentrum fuer Mikroelektronik Dresden (Germany)
Georg G. Mehliss, Fotochemische Werke GmbH (Germany)

Published in SPIE Proceedings Vol. 1674:
Optical/Laser Microlithography V
John D. Cuthbert, Editor(s)

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