Proceedings Paper
Characterization and performance of advanced i-line photoresists for 0.5-micron CMOS technology| Format | Member Price | Non-Member Price |
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Paper Abstract
An evaluation procedure for advanced I-line photoresists is presented. The evaluation is comprehensive in nature, including manufacturing and quality requirements as well as the usual patterning performance tests. The evaluation is divided into three general categories: Performance, Manufacturability, and Materials. These categories include a total of 23 individual performance tests and 15 evaluation criteria. A scoring method is described which assigns a numerical rating to the resist performance. Weighting constants contained in this procedure can be adjusted to vary the emphasis on particular measures of the photoresist performance.
Paper Details
Date Published: 1 June 1992
PDF: 7 pages
Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); doi: 10.1117/12.130315
Published in SPIE Proceedings Vol. 1674:
Optical/Laser Microlithography V
John D. Cuthbert, Editor(s)
PDF: 7 pages
Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); doi: 10.1117/12.130315
Show Author Affiliations
Jeffrey R. Johnson, SGS-Thomson Microelectronics, Inc. (United States)
Gregory J. Stagaman, SGS-Thomson Microelectronics, Inc. (United States)
John C. Sardella, SGS-Thomson Microelectronics, Inc. (United States)
Gregory J. Stagaman, SGS-Thomson Microelectronics, Inc. (United States)
John C. Sardella, SGS-Thomson Microelectronics, Inc. (United States)
Charles R. Spinner III, SGS-Thomson Microelectronics, Inc. (United States)
Fu-Tai Liou, SGS-Thomson Microelectronics, Inc. (United States)
Fu-Tai Liou, SGS-Thomson Microelectronics, Inc. (United States)
Published in SPIE Proceedings Vol. 1674:
Optical/Laser Microlithography V
John D. Cuthbert, Editor(s)
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