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Proceedings Paper

Exploring the limits of phase-shift lithography: Part I--the alternating shifter
Author(s): Shane R. Palmer; Cesar M. Garza Sr.; Craig B. Sager; Patrick Reynolds
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Paper Abstract

Phase shift technology shows promise to extend the useful resolution and focus latitude to contemporary optical steppers. If successful in application, this represents significant cost savings to the manufacturing wafer fobs provided that the steppers can be used or modified to take advantage of phase-shift techniques. In this paper we explore the limits of phase-shift lithography, particularly at i-line. We do this following a two-fold approach: a) using simulations and b) collecting experimental data using different resist processes and phase-shift techniques. We conclude that using state-of-the-art photoresist processes and phase-shift techniques, i-line optical lithography can be extended to the 0.25 ?m regime.

Paper Details

Date Published: 1 June 1992
PDF: 16 pages
Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); doi: 10.1117/12.130311
Show Author Affiliations
Shane R. Palmer, Texas Instruments Inc. (United States)
Cesar M. Garza Sr., Texas Instruments Inc. (United States)
Craig B. Sager, Benchmark Technologies, Inc. (United States)
Patrick Reynolds, Benchmark Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 1674:
Optical/Laser Microlithography V
John D. Cuthbert, Editor(s)

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